? semiconductor components industries, llc, 2005 june, 2005 ? rev. 0 1 publication order number: MBR30H100CT/d MBR30H100CT switchmode ? power rectifier 100 v, 30 a features and benefits ? low forward voltage: 0.67 v @ 125 c ? low power loss/high efficiency ? high surge capacity ? 175 c operating junction temperature ? 30 a total (15 a per diode leg) ? guard?ring for stress protection ? pb?free package is available applications ? power supply ? output rectification ? power management ? instrumentation mechanical characteristics: ? case: epoxy, molded ? epoxy meets ul 94 v?0 @ 0.125 in ? weight: 1.9 grams (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead temperature for soldering purposes: 260 c max. for 10 seconds ? shipped 50 units per plastic tube maximum ratings please see the table on the following page to?220ab case 221a plastic 3 4 1 schottky barrier rectifier 30 amperes 100 volts 1 3 2, 4 2 marking diagram yyww b30h100 a k a yy = year ww = work week b30h100 = device code aka = polarity designator http://onsemi.com device package shipping ordering information MBR30H100CT to?220 50 units/rail MBR30H100CTg to?220 (pb?free) 50 units/rail
MBR30H100CT http://onsemi.com 2 maximum ratings (per diode leg) rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 100 v average rectified forward current (rated v r ) t c = 155 c i f(av) 15 a peak repetitive forward current (rated v r , square wave, 20 khz) t c = 150 c i frm 30 a nonrepetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 250 a operating junction temperature (note 1) t j +175 c storage temperature t stg 65 to +175 c voltage rate of change (rated v r ) dv/dt 10,000 v/ s controlled avalanche energy (see test conditions in figures 10 and 11) w aval 200 mj esd ratings: machine model = c human body model = 3b > 400 > 8000 v thermal characteristics maximum thermal resistance ? junction?to?case ? junction?to?ambient r jc r ja 2.0 60 c/w electrical characteristics (per diode leg) maximum instantaneous forward voltage (note 2) (i f = 15 a, t c = 25 c) (i f = 15 a, t c = 125 c) (i f = 30 a, t c = 25 c) (i f = 30 a, t c = 125 c) v f 0.80 0.67 0.93 0.80 v maximum instantaneous reverse current (note 2) (rated dc voltage, t c = 125 c) (rated dc voltage, t c = 25 c) i r 6.0 0.0045 ma maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual str ess limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation i s not implied, damage may occur and reliability may be affected. 1. the heat generated must be less than the thermal conductivity from junction?to?ambient: dp d /dt j < 1/r ja . 2. pulse test: pulse width = 300 s, duty cycle 2.0%.
MBR30H100CT http://onsemi.com 3 i f , instantaneous forward current (amps) figure 1. typical forward voltage figure 2. maximum forward voltage v f , instantaneous forward voltage (volts) 100 1 0.1 0.4 0 0.2 1.0 t j = 150 c t j = 25 c 0.8 0.6 i r , maximum reverse current (amps) i r , reverse current (amps) figure 3. typical reverse current figure 4. maximum reverse current 20 0 v r , reverse voltage (volts) 1.0e?01 1.0e?02 1.0e?03 1.0e?06 1.0e?08 40 t j = 125 c t j = 150 c t j = 25 c i f , average forward current (amps) figure 5. current derating t c , case temperature ( c) 120 110 10 5 0 140 150 130 160 square wave dc p fo , average power dissipation (watts) 15 0 i o , average forward current (amps) 16 2 0 510 square figure 6. forward power dissipation 10 1.2 10 t j = 125 c 60 80 100 1.0e?07 1.0e?05 1.0e?04 20 0 v r , reverse voltage (volts) 1.0e?01 1.0e?02 1.0e?03 1.0e?06 1.0e?08 40 t j = 125 c t j = 150 c t j = 25 c 60 80 10 0 1.0e?07 1.0e?05 1.0e?04 170 180 100 i f , instantaneous forward current (amps ) v f , instantaneous forward voltage (volts) 100 1 0.1 0.4 0 0.2 1.0 t j = 150 c t j = 25 c 0.8 0.6 1.2 10 t j = 125 c 4 6 8 12 14 dc 25 15 25 20 20
MBR30H100CT http://onsemi.com 4 c, capacitance (pf) 0 v r , reverse voltage (volts) 100 10 40 80 t j = 25 c figure 7. capacitance 100 20 60 1000 r(t), transient thermal resistance figure 8. thermal response junction?to?ambient 100 0 0.1 0.00001 t 1 , time (sec) 1 0.0001 0.001 0.01 1 10 100 0.000001 0.1 10 100 p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.2 0.1 0.05 0.01 r(t), transient thermal resistance figure 9. thermal response junction?to?case 100 0 0.1 0.00001 t 1 , time (sec) 10 0.01 0.0001 0.001 0.01 1 10 100 0.000001 0.1 1 p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.2 0.1 0.05 0.01 0.01
MBR30H100CT http://onsemi.com 5 mercury switch v d i d dut 10 mh coil +v dd i l s 1 bv dut i l i d v dd t 0 t 1 t 2 t figure 10. test circuit figure 11. current?voltage waveforms the unclamped inductive switching circuit shown in figure 10 was used to demonstrate the controlled avalanche capability of this device. a mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. when s 1 is closed at t 0 the current in the inductor i l ramps up linearly; and energy is stored in the coil. at t 1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt ef fects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at bv dut and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t 2 . by solving the loop equation at the point in time when s 1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the v dd power supply while the diode is in breakdown (from t 1 to t 2 ) minus any losses due to finite component resistances. assuming the component resistive elements are small equation (1) approximates the total energy transferred to the diode. it can be seen from this equation that if the v dd voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when s 1 was closed, equation (2). w aval 1 2 li 2 lpk bv dut bv dut ?v dd w aval 1 2 li 2 lpk equation (1): equation (2):
MBR30H100CT http://onsemi.com 6 package dimensions to?220 plastic case 221a?09 issue aa notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 ??? 1.15 ??? z ??? 0.080 ??? 2.04 b q h z l v g n a k f 123 4 d seating plane ?t? c s t u r j on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, r epresentation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 MBR30H100CT/d switchmode is a trademark of semiconductor components industries, llc. literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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